Global Power Technology is one of the pioneers in the industrialization of China’s silicon carbide (SiC) power devices, as well as the first third-generation semiconductor material silicon carbide device manufacturing and application solution provider in China.
Product Range
- ⦿ SiCBJT: 1200V 10A
- ⦿ SiCMOSFET: 1200V 40mΩ / 80mΩ
- ⦿ SiCModule: 650V / 1200V @ 200A~450A
- ⦿ SiC SBD: 650V (2A-100A)
- ⦿ 1200V (2A-50A), 1700V (5A/10A/20A), 3300V (0.6A-50A)
Key Applications
- ⦿ Communication Systems
- ⦿ General Electronics
- ⦿ Industrial Equipment
- ⦿ Medical Devices